Under high-frequency environments, third-generation semiconductors can still deliver exceptional performance and stability. Because the first two generations of semiconductors are more prone to failure in high-temperature situations and hence cannot be employed in harsher environments, third-generation semiconductors with great energy efficiency and low energy consumption have become the new darlings of the new era. The temperature, frequency, and power of silicon and gallium arsenide have reached their limits, making it difficult to increase power and speed once the operating temperature exceeds 100☌, the temperature, frequency, and power of silicon and gallium arsenide have reached their limits, making it difficult to increase power and speed. The demand for high-frequency, high-speed computing and high-speed charging of technology items has increased as the 5G era and electric vehicles have arrived.
Ⅰ.The background of the third-generation semiconductor becoming the new favorite SiC and GaN have their own advantages and different development areas The background of the third-generation semiconductor becoming the new favorite
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